LiTong Engineering Team
Technical Review • August 25, 2025
The GCM300M12K-M1 represents the pinnacle of Starpower's SiC technology, delivering exceptional performance in high-power applications. This advanced SiC MOSFET module combines ultra-low switching losses with robust thermal performance, making it ideal for demanding applications where efficiency and power density are critical.
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | - | 1200 | V |
| Gate-Source Voltage | VGS | - | -10 | - | +25 | V |
| Drain Current (DC) | ID | Tc=25°C | - | - | 300 | A |
| Drain Current (Pulse) | IDP | Tc=25°C | - | - | 600 | A |
| Drain-Source On-Resistance | RDS(on) | ID=300A, VGS=18V | - | 4.5 | 6.0 | mΩ |
| Gate Threshold Voltage | VGS(th) | ID=10mA, VDS=VGS | 2.5 | 3.5 | 4.5 | V |
| Input Capacitance | Ciss | VDS=800V, VGS=0V, f=1MHz | - | 12 | - | nF |
| Turn-On Delay Time | td(on) | VDD=600V, ID=300A, VGS=±18V | - | 15 | - | ns |
| Turn-Off Delay Time | td(off) | VDD=600V, ID=300A, VGS=±18V | - | 25 | - | ns |
Key Features & Benefits
Ultra-Low Switching Losses
Revolutionary SiC technology enables switching losses as low as 10-20% of equivalent silicon devices, dramatically improving system efficiency.
Superior Thermal Performance
Advanced thermal design with junction-to-case thermal resistance of 0.12°C/W, enabling higher power density and reduced cooling requirements.
High-Frequency Operation
Capable of switching frequencies up to 100kHz+, enabling smaller passive components and more compact system designs.
Robust Gate Oxide
Enhanced gate oxide reliability with superior avalanche capability, ensuring long-term reliability in demanding applications.
Industrial Grade Reliability
Designed for harsh industrial environments with comprehensive quality assurance and extended temperature operation capability.
High Power Density
Compact package design enables higher power output in smaller footprints, optimizing system-level power density.
Application Areas
EV Fast Charging Stations
Perfect for ultra-fast DC charging stations delivering 150-350kW. The module's low switching losses enable 95%+ system efficiency while maintaining compact charger footprints.
Solar String Inverters
Ideal for high-efficiency solar inverters where maximum power extraction and grid compliance are critical. Enables transformerless designs with superior efficiency.
High-Frequency Power Supplies
Suitable for industrial power supplies requiring high switching frequencies and compact designs. Enables resonant converter topologies with minimal losses.
Welding Equipment
Excellent for high-power welding equipment where efficiency and thermal performance are critical for reliable operation in demanding environments.
Performance Characteristics
Efficiency Comparison
Efficiency vs. Switching Frequency
The GCM300M12K-M1 demonstrates superior efficiency across a wide range of operating frequencies:
- 20kHz Operation: 98.5% efficiency at 200A, 800V
- 50kHz Operation: 97.8% efficiency at 150A, 800V
- 100kHz Operation: 96.5% efficiency at 100A, 800V
These efficiency figures represent a 2-4% improvement over equivalent silicon IGBT modules, translating to significant energy savings in high-volume applications.
Thermal Management
The module's advanced thermal design enables operation at higher temperatures with reduced cooling requirements:
- Junction Temperature: Maximum Tj = 175°C
- Thermal Resistance: RthJC = 0.12°C/W
- Power Cycling: 50,000 cycles at ΔT =