Starpower SiC MOSFET Modules

High-frequency, high-efficiency solutions for next-generation power electronics

Starpower SiC (Silicon Carbide) MOSFET modules represent the cutting edge of power semiconductor technology. These modules deliver exceptional performance in high-frequency, high-temperature, and high-efficiency applications where traditional silicon devices reach their limits.

As a premier Starpower distributor, LiTong provides access to the full range of SiC modules, from discrete devices to advanced power modules. Our technical team offers comprehensive support for design-in, selection, and optimization of SiC solutions.

How to Choose the Most Suitable Starpower Module for Your Project?

Our comprehensive selection guide helps you identify the right module based on voltage, current, switching frequency, and application requirements.

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Key Characteristics of Starpower SiC Modules

  • High Switching Frequency: Enable smaller magnetic components and higher power density
  • Low Switching Losses: Dramatically reduced losses compared to silicon IGBTs
  • High Temperature Operation: Reliable performance at elevated temperatures
  • High Efficiency: Superior efficiency across a wide operating range
  • Fast Switching: Nanosecond switching speeds for precise control

SiC Module Series

GCM300M12K-M1 Series

High-performance 1200V SiC MOSFET modules optimized for EV traction inverters and fast chargers.

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GCM650M12K Series

High-current 1200V SiC modules for industrial drives and high-power converters.

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GCM100M12 Series

Compact 1200V SiC modules for consumer electronics and home appliances.

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Need Help Selecting the Right SiC Module?

Our FAE team provides expert guidance for your specific application requirements.

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