The GDM50N60L is an excellent solution for designers looking for reliable performance in high-frequency switching applications. Our FAE team has successfully used this module in numerous switch-mode power supply designs, where its low switching losses and fast switching capabilities have enabled manufacturers to achieve high efficiency and compact designs. The module's robust construction ensures reliable operation in demanding power conversion applications.
The GDM50N60L features low gate charge and fast switching characteristics that minimize switching losses at high frequencies. Its low output capacitance and optimized internal design enable efficient operation in applications switching above 100kHz. The module's low RDS(on) also contributes to reduced conduction losses.
We recommend using a dedicated gate driver IC with +10V/-5V drive capability. The gate resistance should be between 1Ω and 5Ω for optimal switching performance. Include TVS diodes for ESD protection on the gate-source path. Proper PCB layout is crucial to minimize parasitic inductance in the gate drive loop.
The module should be mounted on an adequate heatsink with thermal resistance below 2.0°C/W for reliable operation. For high-duty-cycle applications, consider forced air cooling. The junction-to-case thermal resistance is 1.0°C/W, allowing for effective heat dissipation with proper thermal design.
As an authorized Starpower distributor, LiTong is ready to support your project. Contact us for genuine parts and expert advice!
Contact Our Experts| Part Number | GDM50N60L |
|---|---|
| Technology | MOSFET |
| Voltage | 600V |
| Current | 50A |
| Package Type | TO-247 |
| RDS(on) | 0.25Ω @ 50A |
| Switching Losses | Low |
| Thermal Resistance | 1.0°C/W (J-C) |
As an authorized Starpower distributor, LiTong is ready to support your project with genuine parts and expert advice!
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