Distributor Review/Application Interpretation
The GDM200N60L represents the pinnacle of Starpower's MOSFET technology, delivering exceptional performance in ultra-high-power applications. Our FAE team has successfully implemented this module in numerous high-power industrial systems, where its ultra-low conduction losses and robust construction have significantly improved system efficiency and reliability. The module's advanced thermal design enables continuous operation at full load, making it ideal for demanding applications.
Key Features
- 600V / 200A rating for ultra-high-power applications
- Ultra-low conduction losses for maximum efficiency
- Fast switching speed for high-frequency operation
- Low on-resistance (RDS(on)) for reduced power dissipation
- Advanced thermal design for reliable operation
Applications
- Ultra-high-power switch-mode power supplies
- Industrial motor drives
- Telecommunications rectifiers
- Uninterruptible power supplies (UPS)
- Material processing equipment
FAQ
The GDM200N60L is specifically designed for applications requiring maximum power density and reliability. Its ultra-low RDS(on) of just 0.06Ω enables efficient operation at extremely high currents while minimizing thermal stress. The module's robust construction and advanced thermal design ensure reliable operation in harsh industrial environments.
The module should be mounted on an adequate heatsink with thermal resistance below 0.25°C/W for reliable operation. For high-power applications, consider forced air or liquid cooling. The junction-to-case thermal resistance is 0.15°C/W, allowing for effective heat dissipation with proper thermal design.
Yes, the GDM200N60L is designed for easy paralleling. Its positive temperature coefficient of RDS(on) provides natural current sharing between paralleled devices. For optimal performance, ensure symmetrical PCB layout and matched gate drive circuits. Current balancing of ±5% is typically achievable with proper design.
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Specifications
| Part Number | GDM200N60L |
|---|---|
| Technology | MOSFET |
| Voltage | 600V |
| Current | 200A |
| Package Type | TO-247 |
| RDS(on) | 0.06Ω @ 200A |
| Switching Losses | Very Low |
| Thermal Resistance | 0.15°C/W (J-C) |